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HUF76013P3 数据表(PDF) 2 Page - Intersil Corporation

部件名 HUF76013P3
功能描述  20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
PDF  11 Pages
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

HUF76013P3 数据表(HTML) 2 Page - Intersil Corporation

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Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 11)
20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V
-
-
1
µA
VDS = 20V, VGS = 0V, TC = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 10)
1
-
3
V
Drain to Source ON Resistance
rDS(ON)
ID = 20A, VGS = 10V (Figures 8, 9)
-
0.018
0.022
W
ID = 20A, VGS = 5V (Figure 8)
-
0.025
0.030
W
SWITCHING SPECIFICATIONS (VGS = 5V)
Turn-On Time
tON
VDD = 10V, ID = 20A
VGS = 5V, RGS = 19Ω
(Figures 14, 18, 19)
-
-
197
ns
Turn-On Delay Time
td(ON)
-11-
ns
Rise Time
tr
-
120
-
ns
Turn-Off Delay Time
td(OFF)
-19-
ns
Fall Time
tf
-30-
ns
Turn-Off Time
tOFF
-
-
72
ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 10V, ID = 20A
VGS = 10V,
RGS = 19Ω
(Figures 15, 18, 19)
-
-
151
ns
Turn-On Delay Time
td(ON)
-7-
ns
Rise Time
tr
-93-
ns
Turn-Off Delay Time
td(OFF)
-37-
ns
Fall Time
tf
-29-
ns
Turn-Off Time
tOFF
-
-
100
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Qg(TOT)
VGS = 0V to 10V
VDD = 10V,
ID = 20A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
-
14.4
17
nC
Total Gate Charge at 5V
Qg(TOT)
VGS = 0V to 5V
-
7.8
9
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
0.9
1
nC
Gate to Source Gate Charge
Qgs
-
3.5
-
nC
Gate to Drain “Miller” Charge
Qgd
-
3.2
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 20V, VGS = 0V,
f = 1MHz
(Figure 12)
-
624
-
pF
Output Capacitance
COSS
-
444
-
pF
Reverse Transfer Capacitance
CRSS
-71-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 20A
-
-
1.25
V
ISD = 10A
-
-
1.0
V
Reverse Recovery Time
trr
ISD = 20A, dISD/dt = 100A/µs-
-
55
ns
Reverse Recovered Charge
QRR
ISD = 20A, dISD/dt = 100A/µs-
-
82
nC
HUF76013P3, HUF76013D3S



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