C-733

CPU165MU

IGBT SIP MODULE

Features

Parameter

Typ.

Max.

Units

Junction-to-Case, each IGBT, one IGBT in conduction

—

1.5

Junction-to-Case, each diode, one diode in conduction

—

2.0

°C/W

Case-to-Sink,flat,greased surface

0.1

—

Wt

Weight of module

20 (0.7)

—

g (oz)

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

PD - 5.029

Ultra-Fast IGBT

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current, each IGBT

33

Continuous Collector Current, each IGBT

17

Pulsed Collector Current

100

A

Clamped Inductive Load Current

100

Diode Continuous Forward Current

15

Diode Maximum Forward Current

100

Gate-to-Emitter Voltage

±20

V

Isolation Voltage, any terminal to case, 1 minute

2500

Maximum Power Dissipation, each IGBT

83

W

Maximum Power Dissipation, each IGBT

33

Operating Junction and

-40 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Absolute Maximum Ratings

Product Summary

Output Current in a Typical 20 kHz Motor Drive

Power Factor 0.8, Modulation Depth 80% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

1,2

4

5

9

6,7

11,12

Q1

Q2

D1

D2

Revision 1

IMS-1

Next Data Sheet

Index

Previous Datasheet

To Order