CPU165MU datasheet(2/8 Pages) IRF

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C-734

CPU165MU

Pulse width

≤ 80µs; duty factor ≤ 0.1%.

VCC=80%(VCES), VGE=20V, L=10µH,

RG= 5.0Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Repetitive rating; V GE=20V, pulse width

limited by max. junction temperature.

( See fig. 20 )

Notes:

Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

—

108

140

IC = 27A

Qge

Gate - Emitter Charge (turn-on)

—

VCC = 400V

Qgc

Gate - Collector Charge (turn-on)

—

See Fig. 8

td(on)

Turn-On Delay Time

—

TJ = 25°C

Rise Time

—

IC = 27A, VCC = 480V

td(off)

Turn-Off Delay Time

—

100

200

VGE = 15V, RG = 5.0Ω

Fall Time

—

140

Energy losses include "tail" and

Eon

Turn-On Switching Loss

—

0.76

—

diode reverse recovery.

Eoff

Turn-Off Switching Loss

—

0.26

—

See Fig. 9, 10, 11, 18

Ets

Total Switching Loss

—

1.0

2.0

td(on)

Turn-On Delay Time

—

TJ = 150°C,

See Fig. 9, 10, 11, 18

Rise Time

—

IC = 27A, VCC = 480V

td(off)

Turn-Off Delay Time

—

180

—

VGE = 15V, RG = 5.0Ω

Fall Time

—

130

—

Energy losses include "tail" and

Ets

Total Switching Loss

—

3.7

—

diode reverse recovery.

Cies

Input Capacitance

—

2900

—

VGE = 0V

Coes

Output Capacitance

—

330

—

VCC = 30V

See Fig. 7

Cres

Reverse Transfer Capacitance

—

ƒ = 1.0MHz

trr

Diode Reverse Recovery Time

—

TJ = 25°C

See Fig.

—

105

160

TJ = 125°C

IF = 25A

Irr

Diode Peak Reverse Recovery Current

—

4.5

TJ = 25°C

See Fig.

—

8.0

TJ = 125°C

V R = 200V

Qrr

Diode Reverse Recovery Charge

—

112

375

TJ = 25°C

See Fig.

—

420

1200

TJ = 125°C

di/dt = 200A/µs

di(rec)M/dt

Diode Peak Rate of Fall of Recovery

—

250

—

A/µs

TJ = 25°C

See Fig.

During tb

—

160

—

TJ = 125°C

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage

—

0.60

—

V/°C

VGE = 0V, IC = 1.0mA

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.8

2.3

IC = 17A

VGE = 15V

—

2.2

—

IC = 33A

See Fig. 2, 5

—

1.6

—

IC = 17A, TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0

—

5.5

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage

—

-13

—

mV/°C

VCE = VGE, IC = 250µA

gfe

Forward Transconductance

—

VCE = 100V, IC = 27A

ICES

Zero Gate Voltage Collector Current

—

250

µA

VGE = 0V, VCE = 600V

—

6500

VGE = 0V, VCE = 600V, T J = 150°C

VFM

Diode Forward Voltage Drop

—

1.3

1.7

IC = 25A

See Fig. 13

—

1.2

1.5

IC = 25A, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

—

±500

VGE = ±20V

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