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AN4402 数据表(PDF) 21 Page - STMicroelectronics

部件名 AN4402
功能描述  Multichannel drivers driving inductive loads
PDF  39 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN4402 数据表(HTML) 21 Page - STMicroelectronics

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AN4402
Demagnetization energy
38
3.4
Clamping energy at high battery voltage
3.4.1
Qualitative analysis when the gate-drain clamp is active
The gate-drain clamp is activated
As we will see, the theoretical condition with RL = 0Ω doesn’t provide accurate results,
especially when VBAT is close or equal to VCL_LS.
However, we can draw two qualitative observations from the simplified expression of
EDEMAG (Equation 17).
Equation 17:
EDEMAG is higher than the energy stored in the inductor
Since VBAT < VCL_LS, we see from the simplified expression of EDEMAG(Equation 17), that
the dissipated energy in the output MOSFET is higher than the energy stored in the inductor
(). This is due to the fact that the battery provides additional energy to the output
MOSFET during the turn-off phase.
EDEMAG increases faster than a square function of VBAT
IL0 is proportional to the battery voltage (), and the term
is proportional
to the square of IL0 and therefore to the square of VBAT.
RL > 0 Ω
No parallel resistor to the
inductor: RP = +
Equation 26
with
RL = 0 Ω
RP = +
Equation 27
with
Table 7. EDEMAG2_HS with VBAT > VCL_LS – VCL_HS (continued)
Conditions
EDEMAG2_HS: VBAT > VCL_LS – VCL_HS
L
R
L
------- V
CL_LS IL0
V
CL_LS
V
BAT
R
L
---------------------------------------
V
CL_LS
V
CL_LS
V
BAT
---------------------------------------



ln



I
L0
V
BAT
R
L
--------------
=
1
2
--- LI
L0
2
V
CL_LS
V
CL_LS
V
BAT
---------------------------------------



I
L0
V
BAT
R
L
--------------
=
E
DEMAG_LS
R
P
+
R
L
0
lim
E
DEMAG2_LS
R
P
+
R
L
0
lim
1
2
---LIL0
2
V
CL_LS
V
CL_LS
V
BAT
----------------------------------------



==
1
2
--- LI
L0
2
I
L0
V
BAT
R
L
--------------
=
1
2
--- LI
L0
2



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