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AN628 数据表(PDF) 22 Page - STMicroelectronics |
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AN628 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 35 page ![]() AN628 APPLICATION NOTE 22/35 Vop_min = minimum output operative voltage before the 'power fail' detection. Power Switch A power MOSFET is the active switch used in most application for its frequency features. It will be selected ac- cording with the output boosted voltage and the delivered power. There are two contributions for power losses in the mosfet: conduction losses and switching losses. The on-state power losses can be calculated using the formula: Pon-MOS = IQrms 2 Rdson One extimation of the switching losses can be done considering two separated quantities: . Pcrossover ≈ VO · Irms · tcr · fsw + Prec where: Coss is the Drain capacitance at VDS = 25V. tcr is the crossover time. Cext is the external layout stray capacitance. Prec is the contribution due to the diode recovery. To reduce the crossover losses a snubber network can be used. Booster diode The booster diode will be selected to withstand the output voltage and current. Moreover, it has to be as fast as possible in order to reduce the power switch losses.The STMicroelectronics Turboswitch™ diode series match this specifications, and are expecially suitable for this application. The diode power losses can be split in two contributions: conduction losses and switching losses. The conduc- tion losses can be estimated by: PDon = Vto · IO + Rd · IDrms 2 where: Vto = threshold voltage Rd = differential resistance Sense Resistor The sense resistor produces the signal for the current feedback loop and for the overcurrent protection circuit. An easy criterion to choose the sense resistance is to minimize the power dissipated assuring a sufficient signal to noise ratio. In much high power applications, it could be considered the magnetic sensing approach (see fig. 22). Figure 22. Magnetic Sense P capacitive 10 3 ------ C oss V o 1.5 1 2 ---C ext V o 2 ⋅ + ⋅⋅ f sw ⋅ ≈ Load iD iQ L Rs Co -Vrs |
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