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L6207 数据表(PDF) 10 Page - STMicroelectronics |
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L6207 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 53 page ![]() AN1762 APPLICATION NOTE 10/53 Nevertheless, sensing resistor power rating should be chosen taking into account the peak value of the dissi- pated power: , where Ipk is the peak value of the load current. Using multiple resistors in parallel will help obtaining the required power rating with standard resistors, and re- duce the inductance. RSENSE tolerance reflects on the peak current error: 1% resistors should be preferred. The following table shows RSENSE recommended values (to have 0.5V drop on it) and power ratings for typical examples of current peak values. 3.6 Charge pump external components An internal oscillator, with its output at CP pin, switches from GND to 10V with a typical frequency of 600kHz (see Figure 9). Figure 9. Charge Pump. When the oscillator output is at ground, C5 is charged by VS through D2. When it rises to 10V, D2 is reverse biased and the charge flows from C5 to C8 through D1, so the VBOOT pin, after a few cycles, reaches the max- imum voltage of VS + 10V - VD1 - VD2, which supplies the high-side gate drivers. With a differential voltage between VS and VBOOT of about 9V and both the bridges switching at 50kHz, the typ- ical current drawn by the VBOOT pin is 1.85 mA. Ipk RSENSE Value [Ω] RSENSE Power Rating [W] Alternatives 0.5 1 0.25 1 0.5 0.5 2 X 1 Ω, 0.25W paralleled 1.5 0.33 0.75 3 X 1 Ω, 0.25W paralleled 2 0.25 1 4 X 1 Ω, 0.25W paralleled P R I pk 2 R SEN SE ⋅ ≈ L6205, L6206, L6207 VS + 10 V - VD1 VS -VD1 f = 600 kHz VSA VSB VBOOT CP D1 D2 R4 C8 C5 RDS(ON) = 70 Ω 10 V 10 V 5 V RDS(ON) = 70 Ω To High-Side Gate Drivers 10 V f = 600 kHz Charge Pump Oscillator VS + 10 V - VD1 - VD2 |
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