AN3161

New advanced planar PT STGW35HF60WD

Doc ID 17151 Rev 1

7/14

3

New advanced planar PT STGW35HF60WD

3.1

An advanced PT IGBT has been introduced to enhance the previous 600 V, 35 A IGBT

STGW35NC60WD, tailored for high-frequency applications. From a technology point of

view, two main improvements have been implemented on this IGBT:

1.

The innovative double-drift process which changed the doping profile

2.

The advanced planar strip layout

Both factors allow the reduction of the effective resistance in the drift (N ¯) region and

significantly improve the dynamic performance, especially at high temperature. The

changes performed on the horizontal and vertical structure and their effect on this IGBT are

STGW35HF60WD samples show that the static temperature coefficient (see Equation 2),

Equation 2

Figure 3.

balanced and reliable paralleling. The

belong to the interval (1.68 V

V

CE sat

()

T

J

25

°C

=

() V

CE sat

125

°C

=

()

–

⋅

V

CE sat

125

°C

=

()

⁄

AM06442v1

VCE(sat) at 20 A, 25 °C

VCE(sat) at 20 A, 125 °C

1.4

1.5

1.6

1.7

1.8

1.9

2

2.1

2.2

2.3

2.4

2.5

0

25

50

75

100

125

150

Tj (°C)

Δ≈15.5%

Δ≈14.3%

Δ≈13%

Δ≈ 6%

"A" GROUP

"B" GROUP

"C" GROUP