AN3161 datasheet(4/14 Pages) STMICROELECTRONICS

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Saturation voltage impact on parallel

AN3161

4/14

Doc ID 17151 Rev 1

Saturation voltage impact on parallel

1.1

PT, NPT and trench field stop

PT IGBTs (including those offered by STMicroelectronics) have typically negative VCE(sat)

coefficients at current operative levels. This has a very important effect when two devices

work in parallel. Due to their difference in static output characteristics, the one with the

lowest static VCE(sat) carries more current than the other, as shown in Figure 1. The ∆IC is

the static current difference established at the beginning.

Figure 1.

∆IC (@TJ = 25 °C) of two paralleled IGBT

Assuming the same TJ at the beginning, the IGBT carrying higher current dissipates more

power than the other, and its TJ increases. As a consequence, its VCE(sat) decreases and

the current of the IGBT increases further. The IGBT carrying less current also decreases its

static VCE(sat) as a consequence of the common VCE, and its current must satisfy the

following equation:

Equation 1

AM06441v1

0.25

0.5

0.75

1.25

1.5

1.75

2.25

Vce collector emitter voltage (V)

ΔIC

IC1

IC2

VCE1=VCE2

ICTOT=IC1+IC2

CTOT

C1 T1

()

C2 T2

()

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