AN4191 datasheet(10/20 Pages) STMICROELECTRONICS

部件名	AN4191

功能描述	This report shows the analysis performed on Power MOSFET devices

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

10 / 20 page

Rg impact evaluation by UIS test

AN4191

10/20

Doc ID 023815 Rev 1

In order to measure the impact of Rg, we performed many tests at the same electrical

conditions on an Rg standard device inserting an external Rg driver and catching the case

temperature at steady-state.

At bench, we performed many trials at various resistances using the same electrical circuit

board at different loads, which are the following:

●

inductor load

●

capacitive load (see Figure 8)

●

resistor load (see Figure 8).

Figure 8.

Testing circuit schematics

The results show that the device with high inner Rg has a higher temperature than the

device with equivalent external Rg. The values obtained were plotted for each load

configuration, obtaining the following curves:

Figure 9.

Inductive load

D.U.T

Driver

Positions for voltage and current probes.

Capacitive load

D.U.T

Driver

Resistive load

AM16415V1

Rg vs case temperature

100

110

120

130

140

010

Rg [Ω

Ω ]

AM16416V1

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