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AN4191 数据表(PDF) 5 Page - STMicroelectronics |
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AN4191 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() AN4191 Brief introduction to Power MOSFET intrinsic gate resistance Doc ID 023815 Rev 1 5/20 Figure 2. Internal parameters of the device In order to better understand the impact of Rg on the device’s switching performance, two different analyses are performed: 1. “Unclamped inductive switching” test on a characterization board; the device under test is a 120 A / 40 V LL Vth device selected with different intrinsic Rg values. 2. Application analysis on a 2.5" HDD board, where “good” parts (with correct Rg value) are compared with “bad” devices (with high Rg) in terms of switching behavior and device temperature. Cds Cgd Cgs Rg AM16409V1 |
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