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AN4191 数据表(PDF) 13 Page - STMicroelectronics |
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AN4191 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 20 page ![]() AN4191 Rg impact for MOSFETs in buck/buck-boost configurations Doc ID 023815 Rev 1 13/20 Looking at the green trace (Ch2, drain voltage) in Figure 13, the input voltage (5 V) and the output voltage (- 5 V) are clearly evident, together with the oscillations due to the converter DCM. On the other hand, in Figure 14 the “high Rg” device shows an incorrect behavior. In fact, the converter works in “overcurrent protection mode” when the 5 V is pulled down to 3.5 V and the output voltage has an incorrect value. In Figure 15, more switching cycles for the “bad” part are shown. Figure 15. High Rg device steady-state waveforms Analyzing the drain voltage waveform, the slow drain falling edge indicates that the FET is not turned off although the gate voltage is high (P-channel device). It is evident that the slow falling-down of the FET drain voltage becomes more dangerous during steady-state conditions, when the device turns on and off with a certain fsw. In fact, the device cannot be turned-off effectively at each switching cycle. So, this slow MOSFET turn-off causes an undesired switching loss increase, and therefore, a power dissipation and temperature rise, finally producing the device failure. Figure 13. Standard Rg value Figure 14. High Rg value AM16420V1 AM16421V1 AM16422V1 |
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