AN4209 datasheet(3/19 Pages) STMICROELECTRONICS

3 / 19 page

DocID023949 Rev 2

3/19

AN4209

STRVS parameters

This section defines the electrical and thermal characteristics of the STRVS.

1.1

Electrical parameters

Figure 1. Typical reverse characteristic VR = (IR) of an STRVS device

Figure 1 shows the typical reverse characteristic given at two temperatures of an STRVS

device.

Stand-off voltage (VRM)

The stand-off voltage is specified for I = IRM = 1 µA and Tj = 25 °C. Under these conditions,

the device is still acting as an open circuit. This parameter is one of the key parameters in

circuit protection.

Breakdown voltage (VBR)

The breakdown voltage corresponds to the voltage from which the STRVS starts to go into

the avalanche region. This parameter is specified for I = IBR = 1 mA and Tj = 25 °C. The VBR

parameter follows a linear variation with junction temperature as shown in Equation 1.

Equation 1

Where TREF = reference temperature expressed in °C, generally given at 25 °C and

T = temperature coefficient in 1/°C.

I(A)

V(V)

TJ2 >TJ1 TJ1= 25°C

IBR(25°C)- 1mA

IRM(25°C)- 1µA

IPP(25°C)

(

)

REF

AN4209 数据表(PDF) 3 Page - STMicroelectronics