AN1232

Conclusion

5/6

3

Conclusion

We have demonstrated that DMOS ruggedness, under varying load mismatches, is

dramatically improved with a single implant process through photoresist without modifying

the DMOS layout. Also, RF power performances remain unaffected. From now on, deep

body doping process will be applied to all products in the production phase.

VSWR, a characteristic ruggedness parameter for RF power transistors, is linked to the

standard ruggedness parameters of the DMOS. Therefore, a UIS test, easily implemented

and commonly applied in EWS (Electrical Wafer Sort), can give useful information on the

ruggedness of RF power devices.

4

Revision history

Table 2.

Revision history

Date

Revision

Changes

21-Jun-2004

12

Minor text changes

30-Jul-2007

13

The document has been reformatted