AN1709 datasheet(7/38 Pages) STMICROELECTRONICS

7 / 38 page

7/38

EMC DESIGN GUIDE FOR ST MICROCONTROLLERS

Figure 3. Simplified diagram of the ESD generator

(Rch = 50M

Ω; Rd = 330Ω)

2.1.1.2 Fast Transient Burst (FTB)

More complex than functional ESD, this test which submits the device to a large quantity of

emitted disturbances in a short time, is useful for detecting infrequent and unrecoverable

(Class B or C) Microcontroller states. FTB disturbances (see Figure 4.) are applied to the Mi-

crocontroller power lines through a capacitive coupling network.

ST Microcontroller FTB test correlates with the standards given in Table 2

Table 2. FTB standards

Figure 4. FTB Waveform Diagram

The spike frequency is 5 kHz. The generator produces bursts of spikes that last 15 ms every

300 ms (75 spikes).

The fast transients are coupled to the device DUT with capacitors CC (See Figure 5.).

EUROPEAN NORM

INTERNATIONAL NORM

DESCRIPTION

EN61000-4-4

IEC 1000-4-4

Fast Transient Burst

ESD

generator

Rch

Discharge

tip

HV relay

Cs = 150 pF

Discharge return

connection

Voltage

Burst

Voltage

Pulse

Burst Length

15ms

Burst Period

300ms

Time

0.9Vpk

Vpk

0.5Vpk

0.1Vpk

5ns

50ns

Repetition Frequency: 5kHz; Bursts will

be repeated for at least 1 minute.

Rising and Duration time (±30%) are re-

ferred to a 50

Ω load

AN1709 数据表(PDF) 7 Page - STMicroelectronics

AN1709 数据表(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

数据表下载