October 2010

Doc ID 16211 Rev 2

1/30

PM0063

Programming manual

STM32F100xx

value line Flash programming

Introduction

This programming manual describes how to program the Flash memory of low-density

(STM32F100x4, STM32F100x6), medium-density STM32F100xx (STM32F100x8,

STM32F100xB) and high-density (STM32F100xC, STM32F100xD, STM32F100xE)

microcontrollers. For convenience, these will be referred to as STM32F100xx in the rest of

this document unless otherwise specified.

The STM32F100xx embedded Flash memory can be programmed using in-circuit

programming or in-application programming.

The in-circuit programming (ICP) method is used to update the entire contents of the

Flash memory, using the JTAG, SWD protocol or the boot loader to load the user application

into the microcontroller. ICP offers quick and efficient design iterations and eliminates

unnecessary package handling or socketing of devices.

In contrast to the ICP method, in-application programming (IAP) can use any

download programming data into memory. IAP allows the user to re-program the Flash

memory while the application is running. Nevertheless, part of the application has to have

been previously programmed in the Flash memory using ICP.

The Flash interface implements instruction access and data access based on the AHB

protocol. It implements the logic necessary to carry out Flash memory operations

(Program/Erase). Program/Erase operations can be performed over the whole product

voltage range. Read/Write protections and option bytes are also implemented.

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