Reading/programming the STM32F100xx embedded Flash memory

PM0063

14/30

Doc ID 16211 Rev 2

FLASH_SR register. The end of the program operation is indicated by the EOP bit in the

FLASH_SR register.

The main Flash memory programming sequence in standard mode is as follows:

●

Check that no main Flash memory operation is ongoing by checking the BSY bit in the

FLASH_SR register.

●

Set the PG bit in the FLASH_CR register.

●

Perform the data write (half-word) at the desired address.

●

Wait for the BSY bit to be reset.

●

Read the programmed value and verify.

Note:

The registers are not accessible in write mode when the BSY bit of the FLASH_SR register

is set.

2.3.4

Flash memory erase

The Flash memory can be erased page by page or completely (Mass Erase).

Page Erase

A page of the Flash memory can be erased using the Page Erase feature of the FPEC. To

erase a page, the procedure below should be followed:

●

Check that no Flash memory operation is ongoing by checking the BSY bit in the

FLASH_CR register

●

Set the PER bit in the FLASH_CR register

●

Program the FLASH_AR register to select a page to erase

●

Set the STRT bit in the FLASH_CR register

●

Wait for the BSY bit to be reset

●

Read the erased page and verify