RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131023

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

2 of 8

RFHA1101

Absolute Maximum Ratings

Parameter

Rating

Unit

155

V

-6 to +2

V

2.2

mA

Operational Voltage

28

V

Storage Temperature Range

-55 to +100

°C

200

°C

1.8 x 10

7

Hours

measured at TC = 85°C, DC bias only.

12.5

°C/W

Caution! ESD sensitive device.

RFMD Green: RoHS compliant per EU

Directive 2011/65/EU, halogen free per

IEC 61249-2-21, <1000ppm each of

antimony trioxide in polymeric materials

and red phosphorus as a flame retardant,

and <2% antimony solder.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

..

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table above.

**User will need to define this specification in the final application and ensure bias conditions satisfy the following expression:

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

28

V

-0.96

V

Drain Bias Current

44

mA

Frequency of Operation

DC

10

GHz

DC Functional Test

Voltage

0.4

0.95

1.2

V

BV (off) - Drain Breakdown Voltage

100

>150

V

-1.9

-1.48

-1.1

V

Die Capacitance from on-wafer CV measurements

60

5460

895

by the technology process reliability. Refer to product qualification report for FIT (random) failure rate.