RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131023

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

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RFHA1101

4.3W GaN On SiC Power Amplifier

Die-On-Carrier

The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete

amplifier die-on carrier designed for commercial wireless

infrastructure, cellular and WiMAX infrastructure,

industrial/scientific/medical, and general purpose broadband

amplifier applications. Using an advanced high power density

Gallium Nitride (GaN) semiconductor process, the RFHA1101 is

able to achieve high efficiency and flat gain over a broad

frequency range in a single amplifier design with proper heat

sinking and assembly. The RFHA1101 is an unmatched 0.5µm

gate, GaN transistor die suitable for many applications with

> 36dBm 3dB-compressed power, > 60% 3dB-compressed drain

efficiency, and > 21dB small signal gain at 2GHz.

Functional Block Diagram

Ordering Information

RFHA1101

4.3W GaN on SiC Power Amplifier Die-on-Carrier

Package: Die

Features

■

Broadband Operation DC to

10GHz

1

■

Advanced GaN HEMT Technology

■

Small Signal Gain = 21.4dB at

2.14GHz

■

28V Typical Performance



Output Power 4.3W at P3dB



Drain Efficiency 60% at P3dB

■

Dimensions



GaN Die:

0.448 x 0.825 x0.1mm



GaN Die on Heat Sink:

1.25 x 1.25 x 0.3mm

■

Active Area Periphery: 2.22mm

Applications

■

Commercial Wireless Infrastructure

■

Cellular and WiMAX Infrastructure

■

Civilian and Military Radar

■

General Purpose Broadband

Amplifiers

■

Public Mobile Radios

■

Industrial, Scientific, and Medical

RFHA1101

RFHA1101