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RFHA1101 数据表(PDF) 3 Page - RF Micro Devices

部件名 RFHA1101
功能描述  Advanced GaN HEMT Technology
PDF  8 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RFHA1101 数据表(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 8
RFHA1101
Parameter
Specification
Unit
Condition
Min
Typ
Max
RF Small Signal Figures of Merit
On-Wafer Test
FT
10
GHz
VD = 28V, ID = 170mA
FMAX (based on GTU)
32
GHz
VD = 28V, ID = 170mA
FT
7
GHz
VD = 28V, ID = 44mA
FMAX (based on GTU)
27
GHz
VD = 28V, ID = 44mA
RF Typical Load Pull Performance
On-Wafer Tests [1,2,3,4]
Gain
21.4
dB
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz, trade match
1
Gain
19.4
dB
VDQ = 28V, IDQ = 44mA, CW, f = 2700MHz, trade match
3
Output Power at P3dB
36.3
dBm
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz
Output Power at P3dB
35.8
dBm
VDQ = 28V, IDQ = 44mA, CW, f = 2700MHz
Drain Efficiency at P3dB
60
%
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz
Drain Efficiency at P3dB
60
%
VDQ = 28V, IDQ = 44mA, CW, f =2700MHz



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