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P3C1256L 数据表(PDF) 5 Page - Pyramid Semiconductor Corporation

部件名 P3C1256L
功能描述  LOW POWER 32K x 8 STATIC CMOS RAM
PDF  11 Pages
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制造商  PYRAMID [Pyramid Semiconductor Corporation]
网页  http://www.pyramidsemiconductor.com
标志 PYRAMID - Pyramid Semiconductor Corporation

P3C1256L 数据表(HTML) 5 Page - Pyramid Semiconductor Corporation

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P3C1256L - 32K x 8 STATIC CMOS RAM
Page 5
Document # SRAM143 REV A
AC CHARACTERISTICS—WRITE CyCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol Parameter
-55
-70
-85
Unit
Min
Max
Min
Max
Min
Max
t
WC
Write Cycle Time
55
70
85
ns
t
CW
Chip Enable Time to End of Write
50
60
75
ns
t
AW
Address Valid to End of Write
50
60
75
ns
t
AS
Address Setup Time
0
0
0
ns
t
WP
Write Pulse Width
40
50
60
ns
t
AH
Address Hold Time
0
0
0
ns
t
DW
Data Valid to End of Write
25
30
35
ns
t
DH
Data Hold Time
0
0
0
ns
t
WZ
Write Enable to Output in High Z
25
30
35
ns
t
OW
Output Active from End of Write
5
5
5
ns
TIMIng WAVEFORM OF WRITE CyCLE nO. 1 (WE COnTROLLED)(10,11)
Notes:
10. CE and WE must be LOW for WRITE cycle.
11. OE is LOW for this WRITE cycle to show t
WZ and tOW.
12. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.



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