| 数据搜索系统,热门电子元器件搜索 |
|
P3C1256L 数据表(PDF) 7 Page - Pyramid Semiconductor Corporation |
|
|
|||||||||||||||||||||||||||||
P3C1256L 数据表(HTML) 7 Page - Pyramid Semiconductor Corporation |
|
7 / 11 page ![]() P3C1256L - 32K x 8 STATIC CMOS RAM Page 7 Document # SRAM143 REV A DATA RETEnTIOn CHARACTERISTICS DATA RETEnTIOn WAVEFORM Sym Parameter Test Conditions Min Typ.* V CC = Max V CC = Unit 2.0V 3.0V 2.0V 3.0V V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current CE ≥ V CC - 0.2V, V IN ≥ VCC - 0.2V or V IN ≤ 0.2V 10 15 80 120 µA t CDR Chip Deselect to Data Reten- tion Time 0 ns t R † Operation Recovery Time t RC § ns * TA = +25°C t RC § = Read Cycle Time † = This parameter is guaranteed but not tested. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |