P3C1256L - 32K x 8 STATIC CMOS RAM

Page 3

Document # SRAM143 REV A

(V

Symbol

Parameter

Test Conditions

Max

Unit

C

IN

Input Capacitance

V

7

pF

C

OUT

Output Capacitance

V

9

pF

POWER DISSIPATIOn CHARACTERISTICS VS. SPEED

Sym Parameter

Temperature Range

*

**

Unit

-55

-70

-85

-55

-70

-85

I

CC

Dynamic Operating Current*

Commercial

70

70

70

15

15

15

mA

Industrial

85

85

85

25

25

25

mA

Military

100

100

100

35

35

35

mA

* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously

enabled for writing, i.e. CE and WE ≤ V

** As above but @ f=1 MHz and V

Sym

Parameter

-55

-70

-85

Unit

Min

Max

Min

Max

Min

Max

t

RC

Read Cycle Time

55

70

85

ns

t

AA

Address Access Time

55

70

85

ns

t

AC

Chip Enable Access Time

55

70

85

ns

t

OH

Output Hold from Address Change

5

5

5

ns

t

LZ

Chip Enable to Output in Low Z

5

5

5

ns

t

HZ

Chip Disable to Output in High Z

20

25

30

ns

t

OE

Output Enable Low to Data Valid

30

35

40

ns

t

OLZ

Output Enable Low to Low Z

5

5

5

ns

t

OHZ

Output Enable High to High Z

20

25

30

ns

t

PU

Chip Enable to Power Up Time

0

0

0

ns

t

PD

Chip Disable to Power Down Time

55

70

85

ns

AC ELECTRICAL CHARACTERISTICS—READ CyCLE

(Over Recommended Operating Temperature & Supply Voltage)