IRGP4062DPBF... datasheet(2/13 Pages) IRF

2 / 13 page

July 17, 2013

IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF

Notes:

VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10

This is only applied to TO-220AB package.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

——V

VGE = 0V, IC = 100μA f

CT6

V(BR)CES/TJ

Temperature Coeff. of Breakdown Voltage

—0.30—

V/°C VGE = 0V, IC = 1mA (25°C-175°C)

CT6

—1.60

1.95

IC = 24A, VGE = 15V, TJ = 25°C

5,6,7

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.03

—

IC = 24A, VGE = 15V, TJ = 150°C

9,10,11

—2.04—

IC = 24A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 700μA

9, 10,

VGE(th)/TJ

Threshold Voltage temp. coefficient

—

-18

—

mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)

11, 12

gfe

Forward Transconductance

—

VCE = 50V, IC = 24A, PW = 80μs

ICES

Collector-to-Emitter Leakage Current

—

2.0

μA

VGE = 0V, VCE = 600V

—775

—

VGE = 0V, VCE = 600V, TJ = 175°C

VFM

Diode Forward Voltage Drop

—

1.80

2.6

IF = 24A

—1.28—

IF = 24A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Ref.Fig

Total Gate Charge (turn-on)

—

IC = 24A

Qge

Gate-to-Emitter Charge (turn-on)

—

nC VGE = 15V

CT1

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 400V

Eon

Turn-On Switching Loss

—

115

201

IC = 24A, VCC = 400V, VGE = 15V

CT4

Eoff

Turn-Off Switching Loss

—

600

700

μJ

RG = 10, L = 200μH, LS = 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

715

901

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

—

IC = 24A, VCC = 400V, VGE = 15V

CT4

Rise time

—

RG = 10, L = 200μH, LS = 150nH, TJ = 25°C

td(off)

Turn-Off delay time

—

104

115

Fall time

—

Eon

Turn-On Switching Loss

—

420

—

IC = 24A, VCC = 400V, VGE=15V

13, 15

Eoff

Turn-Off Switching Loss

—

840

—

μJ

RG=10, L= 200μH, LS=150nH, TJ = 175°C

fÃ

CT4

Etotal

Total Switching Loss

—

1260

—

Energy losses include tail & diode reverse recovery

WF1, WF2

td(on)

Turn-On delay time

—

IC = 24A, VCC = 400V, VGE = 15V

14, 16

Rise time

—

RG = 10, L = 200μH, LS = 150nH

CT4

td(off)

Turn-Off delay time

—

125

—

TJ = 175°C

WF1

Fall time

—

WF2

Cies

Input Capacitance

—

1490

—

VGE = 0V

Coes

Output Capacitance

—

129

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0Mhz

TJ = 175°C, IC = 96A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

CT2

Rg = 10

, VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

—

μs

VCC = 400V, Vp =600V

22, CT3

Rg = 10

, VGE = +15V to 0V

WF4

Erec

Reverse Recovery Energy of the Diode

—

621

—

μJ

TJ = 175°C

17, 18, 19

trr

Diode Reverse Recovery Time

—

VCC = 400V, IF = 24A

20, 21

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 10, L =200μH, Ls = 150nH

WF3

Conditions

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