INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

E

G

n-channel

C

Features

• Low switching losses

• Maximum Junction temperature 175 °C

•5 μS short circuit SOA

• Square RBSOA

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

G

C

E

Gate

Collector

Emitter

TO-247AC

IRGP4062DPbF

TO-220AB

IRGB4062DPbF

G

C

E

C

G

C

E

C

TO-247AD

IRGP4062D-EPbF

C

G

C

E

July 17, 2013

1

IRGB4062DPbF

IRGP4062DPbF

IRGP4062D-EPbF

Absolute Maximum Ratings

Param eter

Max.

Units

V

CES

Collector-to-Emitter Voltage

600

V

I

Continuous Collector Current

48

I

Continuous Collector Current

24

I

CM

72

I

LM

c

96

A

I

Diode Continous Forward Current

48

I

Diode Continous Forward Current

24

I

FM

Diode Maximum Forward Current

e

96

V

GE

Continuous Gate-to-Emitter Voltage

±20

V

Transient Gate-to-Emitter Voltage

±30

P

Maximum Power Dissipation

250

W

P

Maximum Power Dissipation

125

T

J

Operating Junction and

-55 to +175

T

ST G

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Thermal Resistance

Param eter

Min.

Typ.

Max.

Units

R

Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB

–––

–––

0.60

R

Thermal Resistance Junction-to-Case-(each Diode) TO-220AB

–––

–––

1.53

R

Thermal Resistance Junction-to-Case-(each IGBT) TO-247

–––

–––

0.65

°C/W

R

Thermal Resistance Junction-to-Case-(each Diode) TO-247

–––

–––

1.62

R

CS

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.50

–––

R

JA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

80

–––