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IRGP4062DPBF... 数据表(PDF) 6 Page - International Rectifier

部件名 IRGP4062DPBF...
功能描述  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
PDF  13 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRGP4062DPBF... 数据表(HTML) 6 Page - International Rectifier

Back Button IRGP4062DPBF... Datasheet HTML 2Page - International Rectifier IRGP4062DPBF... Datasheet HTML 3Page - International Rectifier IRGP4062DPBF... Datasheet HTML 4Page - International Rectifier IRGP4062DPBF... Datasheet HTML 5Page - International Rectifier IRGP4062DPBF... Datasheet HTML 6Page - International Rectifier IRGP4062DPBF... Datasheet HTML 7Page - International Rectifier IRGP4062DPBF... Datasheet HTML 8Page - International Rectifier IRGP4062DPBF... Datasheet HTML 9Page - International Rectifier IRGP4062DPBF... Datasheet HTML 10Page - International Rectifier Next Button
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www.irf.com © 2013 International Rectifier
July 17, 2013
6
IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
Fig. 19
- Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 20
- Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23
- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24
- Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
Fig. 21
- Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22
- VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0
500
1000
1500
diF /dt (A/μs)
5
10
15
20
25
30
35
40
45
0
10
20
30
40
50
60
IF (A)
0
200
400
600
800
1000
RG = 10
RG = 22
RG = 47
RG = 100
8
1012141618
VGE (V)
4
6
8
10
12
14
16
40
80
120
160
200
240
280
0
20
40
60
80
100
VCE (V)
10
100
1000
10000
Cies
Coes
Cres
0
5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES= 300V
VCES= 400V
0
500
1000
1500
diF /dt (A/μs)
500
1000
1500
2000
2500
3000
3500
4000
10
22
100
47
24A
48A
12A



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