© 1996 Microchip Technology Inc.

Preliminary

DS21170A-page 1

FEATURES

• ISO Standard 7816 pad locations

• Low power CMOS technology

- 1 mA active current typical

- 10

µA standby current typical at 5.5V

• Organized as a single block of 128 bytes (128 x 8)

or 256 bytes (256 x 8)

™ compatible

• 100 kHz and 400 kHz compatibility

• Self-timed write cycle (including auto-erase)

• Page-write buffer for up to 8 bytes

• 2 ms typical write cycle time for page-write

• ESD protection > 4 kV

• 1,000,000 E/W cycles guaranteed

• Data retention > 200 years

• Available for extended temperature ranges

DESCRIPTION

The

Microchip

Technology

Inc.

24C01SC

and

24C02SC are 1K-bit and 2K-bit Electrically Erasable

PROMs with bondpad positions optimized for smart

card applications. The devices are organized as a sin-

gle block of 128 x 8-bit or 256 x 8-bit memory with a

two-wire serial interface. The 24C01SC and 24C02SC

also have page-write capability for up to 8 bytes of data.

- Commercial (C):

0

°C to +70°C

DIE LAYOUT

BLOCK DIAGRAM

SDA

DC

SCL

HV GENERATOR

EEPROM

ARRAY

PAGE LATCHES

YDEC

XDEC

SENSE AMP

R/W CONTROL

MEMORY

CONTROL

LOGIC

I/O

CONTROL

LOGIC

SDA

SCL

24C01SC/02SC

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