MJE13003-R

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R221-022.A



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

Collector-Base Voltage

700

V

Emitter Base Voltage

9

V

Collector Current

Continuous

1.5

A

Peak (1)

3

Base Current

Continuous

0.75

A

Peak (1)

1.5

Emitter Current

Continuous

2.25

A

Peak (1)

4.5

Power Dissipation

1.1

W

1.5

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

400

V

Collector Cutoff Current

1

mA

5

Emitter Cutoff Current

1

mA

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

Clamped Inductive SOA with base reverse biased

See Fig.6

ON CHARACTERISTICS

(Note)

DC Current Gain

14

57

5

30

Collector-Emitter Saturation Voltage

0.5

V

1

3

1

Base-Emitter Saturation Voltage

1

V

1.2

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

4

10

MHz

Output Capacitance

21

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

0.05 0.1

μs

Rise Time

0.5

1

μs

Storage Time

2

4

μs

Fall Time

0.4

0.7

μs

Inductive Load, Clamped (Table 1)

Storage Time

1.7

4

μs

Crossover Time

0.29 0.75

μs

Fall Time

0.15

μs

Note: Pulse Test: PW=300μs, Duty Cycle≤2%