MJE13003-R

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R221-022.A



APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance

Reverse Bias Safe Operating Area and Inductive Switching

Resistive

Switching

+125V

D1

-4.0V

SCOPE

Rc

TUT

Coil Data :

GAP for 30 mH/2 A

Ferroxcube core #6656

Full Bobbin ( ~ 200 Turns) #20

D1=1N5820 or

Equiv.

Output Waveforms

+10.3 V

25μS

0

-8.5V

tr, tf<10ns

Duty Cycly=1.0%

Ic

(A)

Tc

(°C)

(μs)

(μs)

(μs)

(μs)

tc

(μs)

0.5

1

1.5

25

100

1.3

1.6

0.23

0.26

0.30

0.30

0.35

0.40

0.30

0.36

25

100

1.5

1.7

0.10

0.13

0.14

0.26

0.05

0.06

0.16

0.29

25

100

1.8

3

0.07

0.08

0.10

0.22

0.05

0.08

0.16

0.28

Table 2. Typical Inductive Switching Performance

Note: All Data Recorded in the Inductive Switching

Circuit in Table 1

Time

90% Ic

2% Ic

10%

Fig.1 Inductive Switching Measurements