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MJE13003-R 数据表(PDF) 7 Page - Unisonic Technologies

部件名 MJE13003-R
功能描述  NPN SILICON POWER TRANSISTOR
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MJE13003-R 数据表(HTML) 7 Page - Unisonic Technologies

  MJE13003-R Datasheet HTML 1Page - Unisonic Technologies MJE13003-R Datasheet HTML 2Page - Unisonic Technologies MJE13003-R Datasheet HTML 3Page - Unisonic Technologies MJE13003-R Datasheet HTML 4Page - Unisonic Technologies MJE13003-R Datasheet HTML 5Page - Unisonic Technologies MJE13003-R Datasheet HTML 6Page - Unisonic Technologies MJE13003-R Datasheet HTML 7Page - Unisonic Technologies MJE13003-R Datasheet HTML 8Page - Unisonic Technologies  
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MJE13003-R
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
7 of 8
www.unisonic.com.tw
QW-R221-022.A
TYPICAL CHARACTERISTICS
0.02
DC Current Gain
0.03
0.05
2
80
60
40
30
20
1
0
8
4
0.1
0.2
0.3
0.5 0.7
Collector Current,IC (A)
0.002
Collector Saturation Region
0.005 0.01
1
2
1.6
1.2
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
Base Current, IB (A)
2
VCE=2V
- --- --VCE=5V
-55°C
25°C
TJ=150°C
6
0.07
1
TJ=25°C
1.5A
1A
0.5A
0.3A
Ic=0.1A
0.02
Base-Emitter Voltage
0.03
0.05
2
1.4
1.2
1
0.8
0.6
0.4
0.1
0.2
0.3
0.5 0.7
25°C
25°C
150°C
0.02
Collector-Emitter Saturation Region
0.03
0.05
0.5
0.35
0.25
0.2
0.15
0.05
0
0.1
0.2
0.3
1
2
Collector Current, IC (A)
25°C
VBE(SAT) @ IC/IB=3
--- ---VBE(ON) @ VCE=2V
TJ=-55°C
150°C
TJ=-55°C
Ic/IB=3
0.3
0.1
0.07
0.7
0.07
1
-0.4
Collector cut-off Region
-0.2
+0.6
0+0.2
+0.4
Base-Emitter Voltage, VBE (V)
VCE=250V
100°C
TJ=150°C
75°C
50°C
25°C
REVERSE
FORWARD
0.1
Capacitance
0.5
50
500
300
200
100
70
30
20
5
1
2
5
10 20
Reverse Voltage, VR (V)
100
1000
50
10
7
125°C
10
4
10
3
10
2
10
1
10
0
10
-1
CIB
COB
TJ=25°C
0.2
200 500
Collector Current,IC (A)



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