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BFP740F 数据表(PDF) 5 Page - Infineon Technologies AG

部件名 BFP740F
功能描述  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BFP740F 数据表(HTML) 5 Page - Infineon Technologies AG

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BFP740F
List of Figures
Data Sheet
5
Revision 2.0, 2015-03-12
Figure 4-1
Total Power Dissipation
P
tot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1
BFP740F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2
Collector Current vs. Collector Emitter Voltage
I
C = f (VCE), IB = Parameter in µA . . . . . . . . . . . . . 16
Figure 5-3
DC Current Gain
h
FE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4
Collector Current vs. Base Emitter Forward Voltage
I
C = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . 17
Figure 5-5
Base Current vs. Base Emitter Forward Voltage
I
B = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-6
Base Current vs. Base Emitter Reverse Voltage
I
B = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-7
Transition Frequency
f
T = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8
3rd Order Intercept Point at output
OIP3 = f (I
C), ZS = ZL =50 Ω, Parameters: VCE in V, f in MHz 19
Figure 5-9
3rd Order Intercept Point at output
OIP3 [dBm] = f (I
C, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz. . . . . . . 20
Figure 5-10 Compression Point at output
OP
1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance
C
CB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain
G
ma,Gms, |S21|
2 = f (f), V
CE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain
G
max = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain
G
max = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Matching
S
11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure
Z
opt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . 23
Figure 5-17 Output Matching
S
22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure
NF
min = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure
NF
min = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure
NF
50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3
Marking Description (Marking BFP740F: R7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures



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