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BFP740F 数据表(PDF) 9 Page - Infineon Technologies AG

部件名 BFP740F
功能描述  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BFP740F 数据表(HTML) 9 Page - Infineon Technologies AG

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BFP740F
Maximum Ratings
Data Sheet
9
Revision 2.0, 2015-03-12
3
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V
CEO
4.0
3.5
V
Open base
T
A = 25 °C
T
A = -55 °C
Collector emitter voltage
V
CES
13
V
E-B short circuited
Collector base voltage
V
CBO
13
V
Open emitter
Emitter base voltage
V
EBO
1.2
V
Open collector
Collector current
I
C
–45
mA
Base current
I
B
–4
mA
Total power dissipation1)
1)
T
S is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
P
tot
–160
mW
T
S ≤ 102 °C
Junction temperature
T
J
–150
°C
Storage temperature
T
Stg
-55
150
°C



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