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BFP740F 数据表(PDF) 11 Page - Infineon Technologies AG

部件名 BFP740F
功能描述  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  28 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BFP740F 数据表(HTML) 11 Page - Infineon Technologies AG

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BFP740F
Electrical Characteristics
Data Sheet
11
Revision 2.0, 2015-03-12
5
Electrical Characteristics
5.1
DC Characteristics
5.2
General AC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Collector emitter breakdown voltage
V
(BR)CEO
44.7
V
I
C =1 mA, IB =0
Open base
Collector emitter leakage current
I
CES
–1
1
4001)
401)
1) Maximum values not limited by the device but by the short cycle time of the 100% test
nA
V
CE =13 V, VBE =0
V
CE =5 V, VBE =0
E-B short circuited
Collector base leakage current
I
CBO
–1
401)
nA
V
CB =5V, IE =0
Open emitter
Emitter base leakage current
I
EBO
–1
401)
nA
V
EB =0.5V, IC =0
Open collector
DC current gain
h
FE
160
250
400
V
CE =3V, IC = 25 mA
Pulse measured
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
–45
GHz
V
CE =3V, IC =25mA
f =2 GHz
Collector base capacitance
C
CB
0.08
0.12
pF
V
CB =3V, VBE =0
f =1MHz
Emitter grounded
Collector emitter capacitance
C
CE
–0.3
pF
V
CE =3V, VBE =0
f =1MHz
Base grounded
Emitter base capacitance
C
EB
–0.4
pF
V
EB =0.5 V,VCB =0
f =1MHz
Collector grounded



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