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BFP740F 数据表(PDF) 11 Page - Infineon Technologies AG |
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BFP740F 数据表(HTML) 11 Page - Infineon Technologies AG |
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11 / 28 page ![]() BFP740F Electrical Characteristics Data Sheet 11 Revision 2.0, 2015-03-12 5 Electrical Characteristics 5.1 DC Characteristics 5.2 General AC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO 44.7 – V I C =1 mA, IB =0 Open base Collector emitter leakage current I CES –1 1 4001) 401) 1) Maximum values not limited by the device but by the short cycle time of the 100% test nA V CE =13 V, VBE =0 V CE =5 V, VBE =0 E-B short circuited Collector base leakage current I CBO –1 401) nA V CB =5V, IE =0 Open emitter Emitter base leakage current I EBO –1 401) nA V EB =0.5V, IC =0 Open collector DC current gain h FE 160 250 400 V CE =3V, IC = 25 mA Pulse measured Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T –45 – GHz V CE =3V, IC =25mA f =2 GHz Collector base capacitance C CB – 0.08 0.12 pF V CB =3V, VBE =0 f =1MHz Emitter grounded Collector emitter capacitance C CE –0.3 – pF V CE =3V, VBE =0 f =1MHz Base grounded Emitter base capacitance C EB –0.4 – pF V EB =0.5 V,VCB =0 f =1MHz Collector grounded |
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