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7N60-R 数据表(PDF) 6 Page - Unisonic Technologies |
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7N60-R 数据表(HTML) 6 Page - Unisonic Technologies |
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6 / 8 page ![]() 7N60-R Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-984. A TYPICAL CHARACTERISTICS 10 1 10 0.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 10 1 0.1 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V Notes: 1. 250µs Pulse Test 2. TC=25°C Notes: 1. VDS=50V 2. 250µs Pulse Test 0 0 Drain Current, ID (A) 24 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 6 8 10 12 1 0.1 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 0.6 10 Note: TJ=25°C Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V 0.2 0.4 0.8 1.0 1.2 1.4 1.6 |
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