UD4606Q

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 10

www.unisonic.com.tw

QW-R211-021.B



N-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note2)

6.9

A

Pulsed Drain Current (Note2)

30

A

Power Dissipation

2

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

P-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 2)

-6

A

Pulsed Drain Current (Note 2)

-30

A

Power Dissipation

2

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on 1in



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note)

67

80

°С/W

Note: Surface Mounted on 1in