UD4606QG-S08-R datasheet(5/10 Pages) UTC

5 / 10 page

UD4606Q

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

5 of 10

www.unisonic.com.tw

QW-R211-021.B



LECTRICAL CHARACTERISTICS(Cont.)

P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-30

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V

-1

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250uA

-1.2

-2

-2.4

Drain-Source On-State Resistance (Note2)

RDS(ON)

VGS=-10V, ID=-6A

37.5

mΩ

VGS=-4.5V, ID=-5A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V,VDS=-15V,f=1.0MHz

920

Output Capacitance

COSS

190

Reverse Transfer Capacitance

CRSS

122

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

VDS=-15V, VGS=-10V,

RG=3Ω, RL=2.7Ω

7.7

Turn-ON Rise Time

5.7

Turn-OFF Delay Time

tD(OFF)

20.2

Turn-OFF Fall Time

9.5

Total Gate Charge (Note2)

VDS=-15V, VGS=-10V, ID=-6A

18.5

Gate-Source Charge

QGS

2.7

Gate-Drain Charge

QGD

4.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=-1A, VGS=0V

-0.76

-1

Diode Continuous Forward Current (Note3)

-4.2

Reverse Recovery Time

tRR

IDS=-6A, dI/dt=100A/μs

Reverse Recovery Charge

QRR

8.8

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300µs, duty cycle ≤2%.

3. Surface Mounted on 1in

2 pad area, t≤10sec.

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