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UD4606QG-S08-R 数据表(PDF) 9 Page - Unisonic Technologies |
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UD4606QG-S08-R 数据表(HTML) 9 Page - Unisonic Technologies |
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9 / 10 page ![]() UD4606Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 9 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS(Cont.) TJ(Max)=150℃ TA=25℃ 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Single Pulse Power Rating Junction- to-Ambient VDS=-15V ID=-6A 10 8 6 4 2 0 04 8 12 16 20 Gate-Charge Characteristics Gate Charge,-QG (nC) Drain to Source Voltage,-VDS (V) 10μs 100μs 1ms 10ms 0.1s 1s 10s DC RDS(ON) Limited TJ(Max)=150℃ TA=25℃ 100.0 10.0 1.0 0.1 0.1 1 10 100 Maximum Forward Biased Safe Operating Area Single Pulse 10 1 0.1 0.01 0.00010.001 0.01 0.1 1 10 100 1000 0.00001 Pulse Width (s) Normalized Maximum Transient Thermal Impedance In descending order D=0.5,0.3,0.1,0.05,0. 02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.Z θ JA.RθJA RθJA=62.5℃/W PD TON T |
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