C

L

Microsemi

11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121

Page 3

Copyright

© 2000

Rev. 0.2,2000-12-15

MWS11-GB11-xx

InGaP HBT Gain Block

A

M I CROSEM I

COM P A N Y

 

  



Unless otherwise specified, the following specifications apply over the operating ambient temperature -40

°C

A

otherwise noted. Test conditions: [Enter Test Conditions Here]

MWS11-GB11-xx

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Application Frequency Range

f

DC

6

GHz

Linear Output Power

P1dB

f=2GHz

16

19

dBm

Output 3

Product*

IP3

34

dBm

Small-Signal Gain

G

f=1 GHz

13

16

dB

Noise Figure

NF

f=1.5 GHz

3.3

3.5

4

dB

Supply Voltage

4.6

5

V

Supply Current

20

60

mA

Frequency Range

DC to

>6000

MHz

1dB Bandwidth

5.5

GHz

Freq = 100MHz

11.3

dB

Freq = 1000MHz

11.3

dB

Freq = 2000MHz

10.2

11.4

dB

Freq = 3000MHz

11.5

dB

Freq = 4000MHz

11.5

dB

Gain

Freq = 6000MHz

9.9

dB

Gain Flatness

100MHz to 2000MHz

0.05

dB

Noise Figure

Freq = 1000MHz

7.6

dB

      

<1.8:1

Input VSWR

      

<2.5:1

      

<1.8:1

Output VSWR

      

<2.5:1

Freq = 1000MHz

34.5

dBm

Freq = 1000MHz

18.5

dBm

Reverse Isolation

Freq = 1000MHz

16.5

dB

Maximum Measured Junction

Temp at DC Bias Conditions

142

°C

1.4x10

3

Years

†

3.4x10

5

Years

†

Mean Time Between Failures

1.8x10

9

Years

†

†

In accordance with Manufacturer design