C

L

Microsemi

11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121

Page 1

Copyright

© 2000

Rev. 0.2,2000-12-15

MWS11-GB11-xx

InGaP HBT Gain Block

A

M I CROSEM I

COM P A N Y





This general purpose amplifier is a low

cost, broadband RFIC manufactured with

an InGaP/GaAs Heterojunction Bipolar

Transistor

(HBT)

process

(MOCVD).

This RFIC amplifier was designed as an

easily cascadable 50 ohm gain block. The

device is self-contained with 50 ohm input

and output impedance.

Applications in-

clude IF and RF amplification in wireless/

wired voice and data communication

products and broadband test equipment

operating up to 6 GHz.

This

RFIC

amplifier

is

initially

available in a plastic SOT-89 3-Pin

package to handle P1dB output power up

to 19dBm (5V). The same RFIC will be

available later in an advanced Microsemi

Gigamite™ package, with significantly

smaller footprint for applications where

board space is at a premium.

IMPORTANT: For the most current data, consult

MICROSEMI’s website: http://www.microsemi.com

 

 

Advanced InGaP HBT

DC to 6GHz

Single +5V Supply

Small Signal Gain = 16dB

P1dB = 19dBm (5V),

f=1GHz

SOT-89 3-Pin, & Gigamite

Packages







Broadband Gain Blocks

IF or RF buffer Amplifiers

Driver Stage for Power

Amps

Final Power Amp for Low to

Medium Power Applications

Broadband Test Equipment


 


 

-1 0

-5

0

5

10

15

20

25

30

35

40

45

-2 0

- 1 5

-1 0

- 5

0

5

1 0

1 5

Pi n ( d Bm )

Po u t

Ga i n

Cu r r e n t

f = 5 . 7 G H z

Vc c = 5 V

No m i n a l C u r r e n t

20 m A

  

PK

Plastic SOT-89

3 Pin

Gigamite

MWS11GB11-S1

MWS11GB11-G1

Note: Available in Tape & Reel.

Append the letter “T” to the part number. (i.e. MSW11GB11-S89T)