C

L

Microsemi

11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121

Page 2

Copyright

© 2000

Rev. 0.2,2000-12-15

MWS11-GB11-xx

InGaP HBT Gain Block

A

M I CROSEM I

COM P A N Y

  

   



DC Supply Voltage..................................................................................................5.0 Vdc

Absolute Max. Limit...................................................................................................60mA

RF Input Power (Pin)...............................................................................................10 dBm

Operating Case Temperature ..........................................................................-40º to +85ºC

Storage Temperature.....................................................................................-60º to +150ºC

Note:

Exceeding these ratings could cause damage to the device. All voltages are with respect to

Ground. Currents are positive into, negative out of specified terminal.







PK

Plastic SOT-89 3-Pin

THERMAL RESISTANCE

θ

JA

XX

°C/W

θ

JC

149°C/W

θ

JT

XX

°C/W

Gigamite

THERMAL RESISTANCE

θ

JA

XX

°C/W

θ

JC

XX

°C/W

θ

JT

XX

°C/W

The

θ

system. All of the above assume no ambient airflow.

  

  

12

3

RF IN

GN D

RF O U T /

BIAS

Ta b is

GN D

(Top View)

 


 
 







RF IN

RF Input pin. A DC blocking capacitor should be used in most applications.

GND

Ground connection. Traces should be minimized and connect immediately to ground.

RF OUT /

BIAS

RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as:

()

CC

D

CC

I

V

V

R

−

=

capacitor should also be used.