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ISO7331CDWR 数据表(PDF) 4 Page - Texas Instruments

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部件名 ISO7331CDWR
功能描述  Robust EMC, Low Power, Triple-Channel Digital Isolators
PDF  26 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

ISO7331CDWR 数据表(HTML) 4 Page - Texas Instruments

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ISO7330C, ISO7330FC, ISO7331C, ISO7331FC
SLLSEK9B – JANUARY 2015 – REVISED APRIL 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
(1)
MIN
MAX
UNIT
Supply voltage(2)
VCC1 , VCC2
–0.5
6
V
Voltage (2)
INx, OUTx, ENx
–0.5
VCC+0.5
(3)
V
Output current, IO
±15
mA
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal and are peak voltage values.
(3)
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V
VESD
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±1500
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
TYP
MAX
UNIT
VCC1, VCC2
Supply voltage
3
5.5
V
IOH
High-level output current
–4
mA
IOL
Low-level output current
4
mA
VIH
High-level input voltage
2
5.5
V
VIL
Low-level input voltage
0
0.8
V
tui
Input pulse duration
40
ns
1 / tui
Signaling rate
0
25
Mbps
TJ
(1)
Junction temperature
136
°C
TA
Ambient temperature
-40
25
125
°C
(1)
To maintain the recommended operating conditions for TJ, see the Thermal Information table.
6.4 Thermal Information
DW PACKAGE
THERMAL METRIC(1)
UNIT
(16) PINS
RθJA
Junction-to-ambient thermal resistance
78.3
RθJCtop
Junction-to-case (top) thermal resistance
40.9
RθJB
Junction-to-board thermal resistance
42.9
°C/W
ψJT
Junction-to-top characterization parameter
15.3
ψJB
Junction-to-board characterization parameter
42.4
RθJCbot
Junction-to-case (bottom) thermal resistance
N/A
PD (ISO7330)
Maximum Power Dissipation by ISO7330
70
VCC1 = VCC2 = 5.5V, TJ = 150°C, CL =
PD1 (ISO7330)
Maximum Power Dissipation by Side-1 of ISO7330
15pF, Input a 12.5 MHz 50% duty cycle
20
mW
square wave
PD2 (ISO7330)
Maximum Power Dissipation by Side-2 of ISO7330
50
PD (ISO7331)
Maximum Power Dissipation by ISO7331
84
VCC1 = VCC2 = 5.5V, TJ = 150°C, CL =
PD1 (ISO7331)
Maximum Power Dissipation by Side-1 of ISO7331
15pF, Input a 12.5 MHz 50% duty cycle
35
mW
square wave
PD2 (ISO7331)
Maximum Power Dissipation by Side-2 of ISO7331
49
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
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Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: ISO7330C ISO7330FC ISO7331C ISO7331FC



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