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NTLJS3A18PZ 数据表(PDF) 2 Page - ON Semiconductor |
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NTLJS3A18PZ 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() NTLJS3A18PZ http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 69 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 37 Junction−to−Ambient – Steady State Min Pad (Note 2) RqJA 186 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C 11.5 mV/°C Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V TJ = 25°C −1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5.0 V ±5.0 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.4 −1.0 V Gate Threshold Temperature Coeffi- cient VGS(TH)/TJ 3.9 mV/°C Drain−to−Source On−Resistance RDS(on) VGS = −4.5 V, ID = −7.0 A 14.6 18 mW VGS = −2.5 V, ID = −5.0 A 20 25 VGS = −1.8 V, ID = −3.0 A 25 50 VGS = −1.5 V, ID = −1.0 A 40 90 Forward Transconductance gFS VDS = −15 V, ID = −3.0 A 40 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = −15 V 2240 pF Output Capacitance COSS 240 Reverse Transfer Capacitance CRSS 210 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −15 V, ID = −4.0 A 28 nC Threshold Gate Charge QG(TH) 1.0 Gate−to−Source Charge QGS 2.9 Gate−to−Drain Charge QGD 8.8 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −15 V, ID = −4.0 A, RG = 1.0 W 8.6 ns Rise Time tr 15 Turn−Off Delay Time td(OFF) 150 Fall Time tf 88 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = −1.0 A TJ = 25°C −0.63 −1.0 V TJ = 125°C −0.50 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 26.1 ns Charge Time ta 10.2 Discharge Time tb 15.9 Reverse Recovery Time QRR 12 nC 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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