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NTLJS3A18PZ 数据表(PDF) 2 Page - ON Semiconductor

部件名 NTLJS3A18PZ
功能描述  Single P?묬hannel Power MOSFET
PDF  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTLJS3A18PZ 数据表(HTML) 2 Page - ON Semiconductor

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THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
69
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
37
Junction−to−Ambient – Steady State Min Pad (Note 2)
RqJA
186
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Ref to 25°C
11.5
mV/°C
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
TJ = 25°C
−1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5.0 V
±5.0
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.4
−1.0
V
Gate Threshold Temperature Coeffi-
cient
VGS(TH)/TJ
3.9
mV/°C
Drain−to−Source On−Resistance
RDS(on)
VGS = −4.5 V, ID = −7.0 A
14.6
18
mW
VGS = −2.5 V, ID = −5.0 A
20
25
VGS = −1.8 V, ID = −3.0 A
25
50
VGS = −1.5 V, ID = −1.0 A
40
90
Forward Transconductance
gFS
VDS = −15 V, ID = −3.0 A
40
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
2240
pF
Output Capacitance
COSS
240
Reverse Transfer Capacitance
CRSS
210
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −15 V,
ID = −4.0 A
28
nC
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
2.9
Gate−to−Drain Charge
QGD
8.8
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −15 V,
ID = −4.0 A, RG = 1.0 W
8.6
ns
Rise Time
tr
15
Turn−Off Delay Time
td(OFF)
150
Fall Time
tf
88
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD
VGS = 0 V, IS = −1.0 A
TJ = 25°C
−0.63
−1.0
V
TJ = 125°C
−0.50
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
26.1
ns
Charge Time
ta
10.2
Discharge Time
tb
15.9
Reverse Recovery Time
QRR
12
nC
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.



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