NTLJS3A18PZ datasheet(3/6 Pages) ONSEMI

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NTLJS3A18PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = −1.8 V

−4.0 to −2.5 V

VDS = −5 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = −4.0 A

TJ = 25°C

VGS = −1.8 V

VGS = −2.5 V

VGS = −4.5 V

ID = −4.0 A

TJ = 85°C

TJ = 125°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.5

1.5

2.5

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

0.6

100

125

150

100

1000

10000

100000

−4.5 V

VGS = −2.0 V

VGS = −1.5 V

0.07

0.08

0.09

0.10

VGS = −1.5 V

NTLJS3A18PZ 数据表(PDF) 3 Page - ON Semiconductor

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