NTLJS3A18PZ datasheet(4/6 Pages) ONSEMI

4 / 6 page

NTLJS3A18PZ

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Threshold Voltage

Figure 12. Single Pulse Maximum Power

Dissipation

TJ, JUNCTION TEMPERATURE (°C)

SINGLE PULSE TIME (s)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Ciss

Coss

Crss

VDS = −15 V

ID = −4.0 A

TJ = 25°C

VDS

VGS

QGS

QGD

VGS = −4.5 V

VDD = −15 V

ID = −4.0 A

td(off)

td(on)

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = −250 mA

400

800

1200

1600

2000

2400

2800

3200

3600

4000

1.0

100

1000

100

0.1

1.0

100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

1.00

−50

−25

100

125

150

100

200

300

400

500

600

700

1.E−01

1.E+01

1.E+03

1.E−03

1.1

1.2

0.90

1.E−05

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