NTMFS4926NE

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

5.8

°C/W

Junction−to−Ambient – Steady State (Note 3)

46.3

Junction−to−Ambient – Steady State (Note 4)

136.2

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

20.4

Junction−to−Top

10.5

°C/W

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.2

1.6

2.2

V

Negative Threshold Temperature Coefficient

3.8

mV/°C

Drain−to−Source On Resistance

4.8

7.0

mW

4.8

7.8

12

7.5

Forward Transconductance

40

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

1004

pF

Output Capacitance

390

Reverse Transfer Capacitance

119

Total Gate Charge

8.7

nC

Threshold Gate Charge

1.4

Gate−to−Source Charge

3.0

Gate−to−Drain Charge

3.5

Total Gate Charge

17.3

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

8.6

ns

Rise Time

36.9

Turn−Off Delay Time

14.7

Fall Time

5.5

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.