NTMFS4926NET1G datasheet(3/7 Pages) ONSEMI

3 / 7 page

NTMFS4926NE

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

6.6

Rise Time

31.8

Turn−Off Delay Time

td(OFF)

18.3

Fall Time

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.87

1.1

TJ = 125°C

0.76

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

21.9

Charge Time

11.0

Discharge Time

10.9

Reverse Recovery Charge

QRR

8.0

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

1.00

Drain Inductance

0.005

Gate Inductance

1.84

Gate Resistance

1.0

2.2

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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