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EM3582-RTR 数据表(PDF) 14 Page - Silicon Laboratories |
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EM3582-RTR 数据表(HTML) 14 Page - Silicon Laboratories |
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14 / 59 page ![]() EM358x 14 Rev 1.0 3.3. Environmental Characteristics Table 3.3 lists the rated environmental characteristics of the EM358x. 3.4. DC Electrical Characteristics Table 3.4 lists the DC electrical characteristics of the EM358x. Table 3.3. Environmental Characteristics Parameter Test Condition Min Typ Max Unit ESD (human body model) On any pin — — ±2 kV ESD (charged device model) Non-RF pins — — ±400 V ESD (charged device model) RF pins — — ±225 V Table 3.4. DC Characteristics Parameter Test Condition Min Typ Max Unit Regulator input voltage (VDD_PADS) 2.1 — 3.6 V Power supply range (VDD_MEM) Regulator output or external input 1.7 1.8 1.9 V Power supply range (VDD_CORE) Regulator output 1.18 1.25 1.32 V Deep Sleep Current Quiescent current, internal oscilla- tor disabled, 4 kB RAM retained –40 °C, VDD_PADS=3.6 V — 0.9 — A +25 °C, VDD_PADS=3.6 V — 1.0 — A +85 °C, VDD_PADS=3.6 V — 2.2 — A Quiescent current, including internal RC oscillator, 4 kB RAM retained –40 °C, VDD_PADS=3.6 V — 1.2 — A +25 °C, VDD_PADS=3.6 V — 1.25 — A +85°C, VDD_PADS=3.6 V — 2.5 — A Quiescent current, including 32.768 kHz oscillator, 4 kB RAM retained –40 °C, VDD_PADS=3.6 V — 1.3 — A +25 °C, VDD_PADS=3.6 V — 1.6 — A +85 °C, VDD_PADS=3.6 V — 2.9 — A Quiescent current, including internal RC oscillator and 32.768 kHz oscillator, 4 kB RAM retained –40 °C, VDD_PADS=3.6 V — 1.6 — A +25 °C, VDD_PADS=3.6 V — 1.9 — A +85 °C, VDD_PADS=3.6 V — 3.2 — A Additional quiescent current per 4 kB block of RAM retained –40 °C, VDD_PADS=3.6 V — 0.007 — A +25 °C, VDD_PADS=3.6 V — 0.067 — A +85 °C, VDD_PADS=3.6 V — 0.76 — A Additional quiescent current when retained RAM exceeds 32 kB –40 °C, VDD_PADS=3.6 V — 0.57 — A +25 °C, VDD_PADS=3.6 V — 0.67 — A +85 °C, VDD_PADS=3.6 V — 2.0 — A Simulated deep sleep (debug mode) current With no debugger activity — 500 — A |
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