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RPC564L60L5BOSY 数据表(PDF) 110 Page - STMicroelectronics

部件名 RPC564L60L5BOSY
功能描述  microcontroller for Aerospace and Defense, SIL3/ASILD safety applications
PDF  137 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RPC564L60L5BOSY 数据表(HTML) 110 Page - STMicroelectronics

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Electrical characteristics
RPC56EL60L5
110/137
DocID026934 Rev 1
3.17
SWG electrical characteristics
3
Retentio
n
C
Minimum data retention at 85 °C average ambient
temperature(3)
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–10,000 P/E cycles
Blocks with 10,001–100,000 P/E cycles
20
10
5
year
s
1.
Operating temperature range is TJ from –40 °C to 150 °C. Typical endurance is evaluated at 25 C.
2.
Typical P/E cycles is 100,000 cycles for 128 KB and 256 KB blocks.
3.
Ambient temperature averaged over duration of application, not to exceed product operating temperature range.
Table 27. Flash memory module life (continued)
No
.
Symbol
Parameter
Value
Unit
Minimu
m
Typical
Maximu
m
Table 28. RPC56EL60L5 SWG Specifications
Symbol
Parameter
Value
Minimum
Typical
Maximum
T
Input clock
12 MHz
16 MHz
20 MHz
T
Frequency Range
1kHz
50 kHz
T
Peak to Peak(1)
0.4 V
2.0V
T
Peak to Peak variation(2)
-6%
6%
T
Common Mode(3)
1.3 V
T
Common Mode variation
-6%
6%
T
SiNAD(4)
45 dB
T
Load C
25 pF
100 pF
T
Load I
0
A
100
A
T
ESD Pad Resistance(5)
230
360
1.
Peak to Peak value is measured with no R or I load.
2.
Peak to Peak excludes noise, SiNAD must be considered.
3.
Common mode value is measured with no R or I load.
4.
SiNAD is measured at Max Peak to Peak voltage.
5.
Internal device routing resistance. ESD pad resistance is in series and must be considered for max Peak to Peak voltages,
depending on application I load and/or R load.



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