STF40N65M2

Electrical ratings

DocID027442 Rev 1

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

V

ID

(1)

32

A

ID

(1)

20

A

IDM

(2)

Drain current (pulsed)

128

A

25

W

dv/dt

(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

V/ns

Insulation withstand voltage (RMS) from all three leads to

2500

V

Storage temperature

- 55 to

150

°C

Max. operating junction temperature

150

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width limited by safe operating area.

(3)

(4)

≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

3.13

°C/W

Thermal resistance junction-ambient max

62.50

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetetive or not repetetive (pulse width

3

A

820

mJ