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STF40N65M2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF40N65M2
功能描述  N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2 Power MOSFET in a TO-220FP package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF40N65M2 数据表(HTML) 5 Page - STMicroelectronics

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STF40N65M2
Electrical characteristics
DocID027442 Rev 1
5/13
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 16 A
RG = 4.7
Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
-
15
-
ns
tr
Rise time
-
10
-
ns
td(off)
Turn-off-delay time
-
96.5
-
ns
tf
Fall time
-
12
-
ns
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
32
A
ISDM
(1)
Source-drain current
(pulsed)
-
128
A
VSD
(2)
Forward on voltage
VGS = 0 V, ISD = 32 A
-
1.6
V
trr
Reverse recovery time
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
-
468
ns
Qrr
Reverse recovery charge
-
8.7
µC
IRRM
Reverse recovery current
-
37.5
A
trr
Reverse recovery time
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
inductive load switching and
diode recovery times")
-
610
ns
Qrr
Reverse recovery charge
-
11.7
µC
IRRM
Reverse recovery current
-
39
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%



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