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STF40N65M2 数据表(PDF) 5 Page - STMicroelectronics |
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STF40N65M2 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STF40N65M2 Electrical characteristics DocID027442 Rev 1 5/13 Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 16 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 15 - ns tr Rise time - 10 - ns td(off) Turn-off-delay time - 96.5 - ns tf Fall time - 12 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 32 A ISDM (1) Source-drain current (pulsed) - 128 A VSD (2) Forward on voltage VGS = 0 V, ISD = 32 A - 1.6 V trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 468 ns Qrr Reverse recovery charge - 8.7 µC IRRM Reverse recovery current - 37.5 A trr Reverse recovery time ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: " Test circuit for inductive load switching and diode recovery times") - 610 ns Qrr Reverse recovery charge - 11.7 µC IRRM Reverse recovery current - 39 A Notes: (1) Pulse width is limited by safe operating area (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5% |
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