STF40N65M2 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STF40N65M2

4/13

DocID027442 Rev 1

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 16 A

0.087

0.099

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

2355

Coss

Output capacitance

102

Crss

Reverse transfer

capacitance

2.7

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 V to 520 V, VGS = 0 V

380

Intrinsic gate resistance

f = 1 MHz open drain

4.5

Total gate charge

VDD = 520 V, ID = 32 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

56.5

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

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